国家/地区 韩国（662） 世界知识产权组织（4）
IPC部 C（654） H（40） B（8）
F（3）
IPC大类 C01（651） H01（40） C23（10）
B05（7） B25（3） F16（3）
C09（2）
IPC小类 C01B（651） H01L（39） C23C（10）
B05B（5） B05D（4） B25J（3）
F16K（3） C09D（2）
IPC C01B031/04（651） H01L041/22（27） H01L041/18（25）
C23C016/26（10） H01L041/08（10） H01L041/187（9）
H01L029/78（7） H01L029/16（6） H01L041/02（5）
H01L041/04（5） H01L041/047（5） B05D001/00（4）
H01L041/113（4） H01L041/25（4） B05B001/30（3）
发明人 LEE Y T（662）
公开年 2016（650） 2015（7） 2018（2） 2020（2）
申请年 2015（589）  2016（39）  2014（32）  2019（2） 
专利权人 LEE Y T（662）

Graphene barrier coating automotive parts manufacturing system comprises e.g. graphene solution precision spraying device, robotic device to mount and detach automobile parts to robot jig, and cloud-based control device.

LEE Y T

Ultra-lightweight and high-strength automobile parts containing graphene manufacturing system comprises e.g. graphene chemical vapor deposition (CVD) device, and robotic device to mount and detach automobile parts on jig.

LEE Y T

Graphene barrier coating automotive component manufacturing system comprises robotic unit for seating and detaching automotive portion in robot jig and graphene solution precisely injecting unit for spraying graphene solution on robot jig.

LEE Y T

Porous graphene film for hydrogen fuel cell electrode for hydrogen vehicle, has porous graphene film which is provided on both sides of membrane/electrode assembly.

LEE Y T

Graphene bending transistor for use in graphene bending circuit wafers, has drain electrode for controlling height of Fermi level of graphene and On/Off electric power, and insulating material layer equipped in lower part of graphene.

LEE Y T

Transistor useful as graphene single-electron transistor and electron tunneling graphene transistor for on/off electricity of electronic device i.e. central processing unit and memory, comprises e.g. a source electrode and a drain electrode.

LEE Y T

Transistor useful as graphene single-electron transistor and electron tunneling graphene transistor for on/off electricity of electronic device i.e. central processing unit and memory, comprises e.g. a source electrode and a drain electrode.

LEE Y T

Transistor for controlling on/off of electricity, comprises source electrode, drain electrode, and graphene connected to source electrode.

LEE Y T

Electron tunneling graphene transistor has crossed obstacle regulating circuit that is equipped with lower portion of piezo material.

LEE Y T

Transistor has crossed obstacle regulating circuit that is equipped in lower portion of Piezo material, and drain electrode to control height of Fermi level of graphene so that on/off of electricity is controlled.

LEE Y T